The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9401336 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 26, 2016

Filed:

Nov. 04, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Charles L. Arvin, Savannah, GA (US);

Harry D. Cox, Rifton, NY (US);

Brian M. Erwin, Lagrangeville, NY (US);

Sarah H. Knickerbocker, Hopewell Junction, NY (US);

Karen P. McLaughlin, Poughkeepsie, NY (US);

David J. Russell, Owego, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/1183 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11618 (2013.01);
Abstract

A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.


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