The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 18, 2015
International Business Machines Corporation, Armonk, NY (US);
Hitachi Chemical Dupont Microsystems, L.l.c., Parlin, NJ (US);
Paul S. Andry, Yorktown Heights, NY (US);
Sarah H. Knickerbocker, Hopewell Junction, NY (US);
Ron R. Legario, New Brunswick, NJ (US);
Cornelia K. Tsang, Mohegan Lake, NY (US);
Melvin P. Zussman, Wilmington, DE (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
HITACHI CHEMICIAL DUPONT MICROSYSTEMS, L.L.C., Parlin, NJ (US);
Abstract
A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.