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Sanjay S Natarajan

USPTO Granted Patents = 31 (Patent Applications = 5)

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 71(Granted Patents)

Location History:

Hillsboro, OR (US) (2017)
Portland, OR (US) (2006 - 2024)

Company Filing History:

21 out of 13,726

Applied Materials, Inc.

Years Active: 2006-2025

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31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12374584 - Multi color stack for self aligned dual pattern formation for multi purpose device structures (2025-07-29),

2. 12062708 - Selective silicon etch for gate all around transistors (2024-08-13),

3. 11749315 - 3D DRAM structure with high mobility channel (2023-09-05),

4. 11705335 - Conformal high concentration boron doping of semiconductors (2023-07-18),

5. 11682668 - Stacked transistor device (2023-06-20),

6. 11621266 - Method of testing a gap fill for DRAM (2023-04-04),

7. 11508828 - Selective silicon etch for gate all around transistors (2022-11-22),

8. 11462411 - Gate contact over active regions (2022-10-04),

9. 11437273 - Self-aligned contact and contact over active gate structures (2022-09-06),

10. 11328928 - Conformal high concentration boron doping of semiconductors (2022-05-10),

11. 11309404 - Integrated CMOS source drain formation with advanced control (2022-04-19),

12. 11295786 - 3D dram structure with high mobility channel (2022-04-05),

13. 11195923 - Method of fabricating a semiconductor device having reduced contact resistance (2021-12-07),

14. 11189635 - 3D-NAND mold (2021-11-30),

15. 11177254 - Stacked transistor device (2021-11-16),

Title: The Innovative Mind of Sanjay S Natarajan

Introduction

Sanjay S Natarajan is an accomplished inventor hailing from Hillsboro, Oregon, with an impressive portfolio of 30 patents to his name. His contributions in the field of technology, particularly in semiconductor design and memory devices, showcase his innovative spirit and technical expertise.

Latest Patents

Among his latest patents, Natarajan has developed a method for selective silicon etch for gate all-around transistors, which involves horizontal gate-all-around devices. This patent details a manufacturing technique that includes selectively isotropically etching semiconductor material layers positioned between source and drain regions of electronic devices. Additionally, he has contributed to the creation of a 3D DRAM structure featuring a high mobility channel. This innovation describes memory devices that consist of multiple bit lines arranged through alternating stacks of memory and dielectric layers, incorporating single crystalline-like silicon layers. The device architecture includes first and second word lines, along with capacitors for enhanced functionality.

Career Highlights

Natarajan's career has seen him excel at prominent technology companies such as Applied Materials, Inc. and Intel Corporation. His insights and innovations have led to significant advancements in semiconductor technologies and memory solutions.

Collaborations

Throughout his career, Natarajan has collaborated with esteemed colleagues including Gaurav Thareja and Gill Yong Lee, further enriching his experience and contributions in the tech industry.

Conclusion

Sanjay S Natarajan stands as a testament to innovation in the semiconductor and memory device sector. His 30 patents and notable collaborations reflect a deep commitment to advancing technology, making him a significant figure in his field. As he continues to push the boundaries of invention, his impact on the industry will undoubtedly inspire future generations of inventors.

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