The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Mar. 30, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Chang Seok Kang, San Jose, CA (US);
Tomohiko Kitajima, San Jose, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Sanjay Natarajan, Portland, OR (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (N:O); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (W:O), wherein 0.1(W:O)<N:O<0.95(W:O).