The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Feb. 24, 2020
Applicant:
Mircomaterials Llc, Wilmington, DE (US);
Inventors:
Yuriy Shusterman, Ballston Lake, NY (US);
Madhur Sachan, Belmont, CA (US);
Susmit Singha Roy, Sunnyvale, CA (US);
Regina Freed, Los Altos, CA (US);
Sanjay Natarajan, Portland, OR (US);
Assignee:
Micromaterials LLC, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/45 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76808 (2013.01); H01L 21/76843 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 29/41775 (2013.01); H01L 29/42372 (2013.01); H01L 29/45 (2013.01); H01L 29/4958 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 2221/1026 (2013.01);
Abstract
Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.