Sam S Garcia

This inventor holds 15 USPTO granted patents. Top assignees: Freescale Semiconductor,inc., Motorola Corporation. Active years: 1998-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sam S Garcia. Retrieved from https://idiyas.com/inventor/sam-s-garcia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 80.0

Average Co-Inventor Count = 3.9

ph-index = 8

Forward Citations = 225(Granted Patents)

Company Filing History:

9 out of 5,491

Freescale Semiconductor,inc.

Years Active: 1998-2013

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8586474 - Method to form a via (2013-11-19),

2. 8168468 - Method of making a semiconductor device including a bridgeable material (2012-05-01),

3. 8003517 - Method for forming interconnects for 3-D applications (2011-08-23),

4. 7932175 - Method to form a via (2011-04-26),

5. 7807572 - Micropad formation for a semiconductor (2010-10-05),

6. 7572723 - Micropad for bonding and a method therefor (2009-08-11),

7. 7422979 - Method of forming a semiconductor device having a diffusion barrier stack and structure thereof (2008-09-09),

8. 7410544 - Method for cleaning electroless process tank (2008-08-12),

9. 6924232 - Semiconductor process and composition for forming a barrier material overlying copper (2005-08-02),

10. 6476623 - Percent backsputtering as a control parameter for metallization (2002-11-05),

11. 6451181 - Method of forming a semiconductor device barrier layer (2002-09-17),

12. 6294458 - Semiconductor device adhesive layer structure and process for forming structure (2001-09-25),

13. 6187682 - Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material (2001-02-13),

14. 6093966 - Semiconductor device with a copper barrier layer and formation thereof (2000-07-25),

15. 5801098 - Method of decreasing resistivity in an electrically conductive layer (1998-09-01),

Title: Innovations of Sam S Garcia

Introduction

Sam S Garcia is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 15 patents to his name, Garcia has made remarkable advancements in methods for forming vias and semiconductor devices.

Latest Patents

Garcia's latest patents include a method to form a via, which involves providing a structure with a mask on a semiconductor substrate. This method includes several steps, such as depositing a second electrically conductive layer and removing portions of it to create a via. Another notable patent is a method of making a semiconductor device that includes a bridgeable material. This method outlines the process of forming conductive layers and insulating layers to create a device that can function as a conductive bridge memory device.

Career Highlights

Throughout his career, Sam S Garcia has worked with leading companies in the semiconductor industry, including Freescale Semiconductor, Inc. and Motorola Corporation. His work has significantly impacted the development of semiconductor technologies and devices.

Collaborations

Garcia has collaborated with notable professionals in the field, including Varughese Mathew and Ritwik Chatterjee. These collaborations have contributed to the innovative advancements in his patents and projects.

Conclusion

Sam S Garcia's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His innovative methods continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]