The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Mar. 11, 2005
Lynne M. Michaelson, Austin, TX (US);
Edward Acosta, Martindale, TX (US);
Ritwik Chatterjee, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Sam S. Garcia, Austin, TX (US);
Varughese Mathew, Austin, TX (US);
Lynne M. Michaelson, Austin, TX (US);
Edward Acosta, Martindale, TX (US);
Ritwik Chatterjee, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Sam S. Garcia, Austin, TX (US);
Varughese Mathew, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier layer to the conductor and the first dielectric layer prevents oxidation of the layer. In one embodiment, the diffusion barrier stack includes two layers; the first layer is a conductive layer and the second layer is a dielectric layer. The diffusion barrier stack minimizes electromigration and copper diffusion from the conductor.