Location History:
- Providence, RI (US) (2008)
- Austin, TX (US) (2006 - 2012)
Company Filing History:
Years Active: 2006-2012
Title: Lynne M Michaelson: Innovator in Semiconductor Technology
Introduction
Lynne M Michaelson is a prominent inventor based in Austin, TX (US). She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
One of her latest patents is titled "Capping layer formation onto a dual damascene interconnect." This patent describes a process for forming a capping layer on a conducting interconnect for semiconductor devices. The process involves providing conductors in a dielectric layer and depositing a capping layer on the upper surface of these conductors. A key feature of this invention is the reaction of the dielectric layer with an organic compound in a liquid phase before the capping layer is deposited.
Another notable patent is "Method of forming a semiconductor device having a diffusion barrier stack and structure thereof." This invention outlines a method for creating a diffusion barrier stack that minimizes electromigration and copper diffusion from conductors. The stack includes a conductive layer and a dielectric layer, which together prevent oxidation and enhance the durability of the semiconductor device.
Career Highlights
Lynne has worked with notable companies in the semiconductor industry, including Freescale Semiconductor, Inc. and NXP B.V. Her experience in these organizations has allowed her to develop innovative solutions that address critical challenges in semiconductor manufacturing.
Collaborations
Throughout her career, Lynne has collaborated with talented professionals, including Varughese Mathew and Olubunmi O Adetutu. These collaborations have contributed to her success and the advancement of semiconductor technology.
Conclusion
Lynne M Michaelson is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. Her innovative approaches continue to influence the development of reliable and efficient semiconductor devices.