The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
May. 29, 2007
Ritwik Chatterjee, Austin, TX (US);
Eddie Acosta, Martindale, TX (US);
Sam S. Garcia, Austin, TX (US);
Varughese Mathew, Austin, TX (US);
Ritwik Chatterjee, Austin, TX (US);
Eddie Acosta, Martindale, TX (US);
Sam S. Garcia, Austin, TX (US);
Varughese Mathew, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a via, comprising (a) providing a structure comprising a mask () disposed on a semiconductor substrate (), wherein the structure has an opening () defined therein which extends through the mask and into the substrate, and wherein the mask comprises a first electrically conductive layer; (b) depositing a second electrically conductive layer () such that the second conductive layer is in electrical contact with the first conductive layer, the second conductive layer having a first portion which extends over the surfaces of the opening and a second portion which extends over a portion of the mask adjacent to the opening; (c) removing the second portion of the second conductive layer; and (d) depositing a first metal () over the first portion of the second conductive layer.