The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
May. 26, 1998
Dean J. Denning, Del Valle, TX (US);
Rama I. Hegde, Austin, TX (US);
Sam S. Garcia, Austin, TX (US);
Robert W. Fiordalice, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A method for insitu performing a cleaning operation along with a physical sputtering operation begins by placing a wafer (,) into a chamber (,). A plasma (,) is generated within the chamber (,) using an inert, noble, or reducing gas. The gas is ionized to form ions (,) within the plasma (,). Power is provided to various components (,and,) within the chamber (,) to ensure that the ions (,) are accelerated towards the wafer (,) during first stages of wafer processing. This acceleration of the ions (,) towards the wafer (,) will clean a surface of the wafer (,). Following this cleaning operation, power supplied within the chamber (,) is altered to accelerate the ions (,) into a reverse direction so that the ions (,) impact a sputter target (,). Due to ionic bombardment of the target (,), a material is sputtered onto a clean surface of the wafer (,) in an insitu manner.