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For the Inventor, By the Inventor

Austin, TX, United States of America

Rama I Hegde

This inventor holds 29 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: Motorola Corporation, Freescale Semiconductor,inc., Nxp USA, Inc.. Active years: 1995-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rama I Hegde. Retrieved from https://idiyas.com/inventor/rama-i-hegde

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 82.8

Average Co-Inventor Count = 1.7

ph-index = 12

Forward Citations = 697(Granted Patents)


Company Filing History:

goldMedal12 out of 20,290 
 
Motorola Corporation
 patents
silverMedal9 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal7 out of 2,851 
 
Nxp USA, Inc.
 patents
4. 1 out of 29 
 
Freescale Semiconductors Inc.
 patents

Years Active: 1995-2020

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Areas of Expertise:
Semiconductor Device
High-k Dielectric
Die Attachment
Bond Pad Structure
Metal Oxide Layer
Conductive Structure
Lead Frame
Transistor
Protective Coating
Surface Cleaning
PVD
Surface Topography
29 patents (USPTO):Explore Patents
1. 10763115 - Substrate treatment method for semiconductor device fabrication (2020-09-01),
2. 10367071 - Method and structure for a large-grain high-k dielectric (2019-07-30),
3. 10217698 - Die attachment for packaged semiconductor device (2019-02-26),
4. 10147697 - Bond pad structure for semiconductor device packaging (2018-12-04),
5. 10121652 - Formation of metal oxide layer (2018-11-06),
6. 9590063 - Method and structure for a large-grain high-K dielectric (2017-03-07),
7. 9559077 - Die attachment for packaged semiconductor device (2017-01-31),
8. 9343422 - Structure for aluminum pad metal under ball bond (2016-05-17),
9. 9337164 - Coating layer for a conductive structure (2016-05-10),
10. 9076783 - Methods and systems for selectively forming metal layers on lead frames after die attachment (2015-07-07),
11. 8921176 - Modified high-K gate dielectric stack (2014-12-30),
12. 8637393 - Methods and structures for capping a structure with a protective coating (2014-01-28),
13. 8440507 - Lead frame sulfur removal (2013-05-14),
14. 8313947 - Method for testing a contact structure (2012-11-20),
15. 7445976 - Method of forming a semiconductor device having an interlayer and structure therefor (2008-11-04),

Title: The Innovative Journey of Rama I Hegde

Introduction: Rama I Hegde, a pioneering inventor based in Austin, TX, is known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Rama I Hegde holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing her diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Rama I Hegde has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the world of invention.

Collaborations: Throughout her career, Rama I Hegde has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all her projects.

Conclusion: Rama I Hegde's relentless pursuit of innovation and her passion for creating a better future through technology make her a true trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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