Austin, TX, United States of America

Rama I Hegde

This inventor holds 29 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: Motorola Corporation, Freescale Semiconductor,inc., Nxp USA, Inc.. Active years: 1995-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rama I Hegde. Retrieved from https://idiyas.com/inventor/rama-i-hegde

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 82.8

Average Co-Inventor Count = 1.7

ph-index = 12

Forward Citations = 697(Granted Patents)


Company Filing History:


Years Active: 1995-2020

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Areas of Expertise:
Semiconductor Device
High-k Dielectric
Die Attachment
Bond Pad Structure
Metal Oxide Layer
Conductive Structure
Lead Frame
Transistor
Protective Coating
Surface Cleaning
PVD
Surface Topography
29 patents (USPTO):Explore Patents

Title: The Innovative Journey of Rama I Hegde

Introduction: Rama I Hegde, a pioneering inventor based in Austin, TX, is known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Rama I Hegde holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing her diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Rama I Hegde has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the world of invention.

Collaborations: Throughout her career, Rama I Hegde has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all her projects.

Conclusion: Rama I Hegde's relentless pursuit of innovation and her passion for creating a better future through technology make her a true trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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