The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Jan. 19, 2017
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventor:
Rama I. Hegde, Austin, TX (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/28194 (2013.01); H01L 21/28556 (2013.01); H01L 29/42376 (2013.01); H01L 29/517 (2013.01); H01L 21/823462 (2013.01); H01L 27/088 (2013.01);
Abstract
A method of forming a semiconductor device () includes depositing a metal oxide () over the substrate (). The depositing includes combining a first metal and oxygen to form the metal oxide having grains and further adding a catalyst during the combining. The catalyst causes the grains to be bigger than would occur in the absence of the catalyst. A conductive layer () is formed over the metal oxide.