The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jun. 07, 2017
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventor:
Rama I. Hegde, Austin, TX (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); H01L 21/02 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02172 (2013.01); C23C 16/405 (2013.01); C23C 16/4404 (2013.01); H01L 21/0226 (2013.01); H01L 21/02318 (2013.01);
Abstract
A method for forming a metal oxide layer on a wafer. In some embodiments, the method includes forming a layer of a metal oxyhalide on a wafer followed by an anneal of the wafer which removes halogens from the layer to form a layer of metal oxide. A semiconductor device may be formed from the wafer.