The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
May. 26, 2006
Applicants:
James K. Schaeffer, Austin, TX (US);
Rama I. Hegde, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
Inventors:
James K. Schaeffer, Austin, TX (US);
Rama I. Hegde, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A stack located over a substrate. The stack includes a layer between a dielectric layer and a metal layer. The layer includes a halogen and a metal. In one embodiment, the halogen is fluorine. In one embodiment, the stack is a control electrode stack for a transistor. In one example the control electrode stack is a gate stack for a MOSFET. In one example, the layer includes aluminum fluoride.