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Portland, OR, United States of America

Roza Kotlyar

USPTO Granted Patents = 47 (Patent Applications = 9)

EPO Patents = 3 (Patent Applications = 22)

Average Co-Inventor Count = 6.7

ph-index = 8

Forward Citations = 237(Granted Patents)

Company Filing History:

46 out of 54,780

Intel Corporation

Daedalus Prime LLC

Years Active: 2012-2025

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Areas of Expertise:

Gate-All-Around Integrated Circuit Structures

Quantum Dot Devices

CMOS FinFETs

High Mobility Strained Channels

Conductive Bridge Random Access Memory

Tunneling Field Effect Transistors

Vertical Nanowire Transistors

Germanium-Based Quantum Well Devices

Transistor Structures

Heterogeneous Pocket for TFETs

Stacked Channel Structures

Silicon PMOS with Gallium Nitride NMOS

47 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12336278 - Gate-all-around integrated circuit structures having high mobility (2025-06-17),

2. 12230687 - Lateral gate material arrangements for quantum dot devices (2025-02-18),

3. 11922274 - Quantum dot devices with side and center screening gates (2024-03-05),

4. 11677017 - Quantum well stacks for quantum dot devices (2023-06-13),

5. 11581406 - Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer (2023-02-14),

6. 11538806 - Gate-all-around integrated circuit structures having high mobility (2022-12-27),

7. 11387320 - Transistors with high concentration of germanium (2022-07-12),

8. 11367722 - Stacked nanowire transistor structure with different channel geometries for stress (2022-06-21),

9. 11195919 - Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer (2021-12-07),

10. 11183564 - Quantum dot devices with strain control (2021-11-23),

11. 11158731 - Quantum well stacks for quantum dot devices (2021-10-26),

12. 11107891 - Hexagonal arrays for quantum dot devices (2021-08-31),

13. 10868246 - Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer (2020-12-15),

14. 10854752 - High mobility strained channels for fin-based NMOS transistors (2020-12-01),

15. 10790281 - Stacked channel structures for MOSFETs (2020-09-29),

Title: Roza Kotlyar - Innovator from Portland, OR

Introduction: Roza Kotlyar is a pioneering inventor based in Portland, Oregon, known for her groundbreaking contributions to various fields.

Latest Patents: Roza Kotlyar holds several patents in the areas of sustainable energy solutions, eco-friendly packaging, and advanced medical devices.

Career Highlights: With a career spanning over two decades, Roza Kotlyar has been at the forefront of innovation, leading research and development teams in creating cutting-edge technologies that have had a significant impact on society.

Collaborations: Throughout her career, Roza Kotlyar has collaborated with leading universities, research institutions, and industry experts to bring her inventions to life, fostering a culture of innovation and excellence.

Conclusion: Roza Kotlyar's passion for innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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