The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Dec. 10, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Roza Kotlyar, Portland, OR (US);

Stephanie A. Bojarski, Beaverton, OR (US);

Hubert C. George, Portland, OR (US);

Payam Amin, Portland, OR (US);

Patrick H. Keys, Portland, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Roman Caudillo, Portland, OR (US);

Florian Luethi, Portland, OR (US);

James S. Clarke, Portland, OR (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); G06N 10/00 (2022.01); H01L 29/06 (2006.01); H01L 29/15 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); G06N 10/00 (2019.01); H01L 29/0665 (2013.01); H01L 29/151 (2013.01); H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01);
Abstract

Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate electrode, the gate electrode includes a first material proximate to side faces of the gate and a second material proximate to a center of the gate, and the first material has a different material composition than the second material.


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