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For the Inventor, By the Inventor

Portland, OR, United States of America

Patrick H Keys

This inventor holds 25 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices. Top assignees: Intel Corporation, Google Inc.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Patrick H Keys. Retrieved from https://idiyas.com/inventor/patrick-h-keys

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 76.0

Average Co-Inventor Count = 5.9

ph-index = 4

Forward Citations = 73(Granted Patents)


Location History:

  • Beaverton, OR (US) (2005)
  • Portland, OR (US) (2010 - 2023)

Company Filing History:

goldMedal24 out of 56,394 
 
Intel Corporation
 patents
silverMedal1 out of 34,018 
 
Google Inc.
 patents

Years Active: 2005-2026

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Areas of Expertise:
Transistor Structures
Gate-All-Around
Integrated Circuits
FinFETs
Quantum Dot Devices
Nanowire Structures
Epitaxial Transistors
Dopant-Diffusion
Strain Control
MOSFETs
Backside Treatment
Stress-Relief Defects
25 patents (USPTO):Explore Patents
1. 12635230 - Transistor structures with reduced source/drain leakage through backside treatment of subfin semiconductor material (2026-05-19),
2. 12575151 - Gate-all-around integrated circuit structures having doped subfin (2026-03-10),
3. 12484266 - Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers (2025-11-25),
4. 12230687 - Lateral gate material arrangements for quantum dot devices (2025-02-18),
5. 12199098 - Fin doping and integrated circuit structures resulting therefrom (2025-01-14),
6. 12100623 - Vertically stacked finFETs and shared gate patterning (2024-09-24),
7. 11757026 - Nanowire structures having wrap-around contacts (2023-09-12),
8. 11527613 - Removal of a bottom-most nanowire from a nanowire device stack (2022-12-13),
9. 11495683 - Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material (2022-11-08),
10. 11469299 - Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers (2022-10-11),
11. 11404319 - Vertically stacked finFETs and shared gate patterning (2022-08-02),
12. 11183564 - Quantum dot devices with strain control (2021-11-23),
13. 11107891 - Hexagonal arrays for quantum dot devices (2021-08-31),
14. 10978590 - Methods and apparatus to remove epitaxial defects in semiconductors (2021-04-13),
15. 10896907 - Retrograde transistor doping by heterojunction materials (2021-01-19),

Title: The Innovative Contributions of Patrick H. Keys

Introduction

Patrick H. Keys is an accomplished inventor based in Portland, OR, recognized for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 22 patents, he has continuously pushed the boundaries of innovation, particularly in quantum dot devices and integrated circuit structures.

Latest Patents

Some of Patrick's latest patents include groundbreaking technologies such as "Lateral Gate Material Arrangements for Quantum Dot Devices." This patent discloses novel gate material arrangements that enhance the performance of quantum dot devices, alongside associated computing methods. In another patent, "Fin Doping and Integrated Circuit Structures Resulting Therefrom," he describes integrated circuits that incorporate complex semiconductor fins with both N-type and P-type dopants, optimizing electrical properties for modern applications.

Career Highlights

Throughout his career, Patrick has held key positions at prominent technology companies, including Intel Corporation and Google Inc. His innovative work at these organizations has not only contributed to product advancements but has also established him as a respected figure in the semiconductor industry.

Collaborations

Patrick's journey in innovation has seen him collaborating with notable professionals such as Stephen M. Cea and Aaron D. Lilak. These collaborations reflect his commitment to teamwork and the sharing of ideas, further enhancing his contributions to the development of cutting-edge technologies.

Conclusion

Patrick H. Keys exemplifies the spirit of innovation through his extensive patent portfolio and impactful career. His work in quantum technologies and integrated circuits showcases the tremendous potential of modern engineering, inspiring future generations of inventors and researchers in the technology landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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