The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Mar. 24, 2021
Intel Corporation, Santa Clara, CA (US);
Aaron D. Lilak, Beaverton, OR (US);
Cory Weber, Hillsboro, OR (US);
Stephen M. Cea, Hillsboro, OR (US);
Leonard C. Pipes, Beaverton, OR (US);
Seahee Hwangbo, Beaverton, OR (US);
Rishabh Mehandru, Portland, OR (US);
Patrick Keys, Portland, OR (US);
Jack Yaung, Portland, OR (US);
Tzu-Min Ou, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Fin doping, and integrated circuit structures resulting therefrom, are described. In an example, an integrated circuit structure includes a semiconductor fin. A lower portion of the semiconductor fin includes a region having both N-type dopants and P-type dopants with a net excess of the P-type dopants of at least 2E18 atoms/cm. A gate stack is over and conformal with an upper portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.