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Croton-on-Hudson, NY, United States of America

Robert H Dennard

USPTO Granted Patents = 97 (Patent Applications = 8)

Average Co-Inventor Count = 3.0

ph-index = 21

Forward Citations = 1,976(Granted Patents)

Forward Citations (Not Self Cited) = 1,952(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Cortlandt, NY (US) (1983 - 1984)
Peekskill, NY (US) (1993 - 1996)
New Rochelle, NY (US) (1995 - 2013)
Yorktown Heights, NY (US) (2012 - 2016)
Cronton-on-Hudson, NY (US) (2013 - 2018)
Croton-on-Hudson, NY (US) (1976 - 2021)

Company Filing History:

95 out of 164,197

International Business Machines Corporation

Globalfoundries Inc.

Years Active: 1976-2021

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Areas of Expertise:

Fully-Depleted CMOS Transistors

U-Shaped Channel

FinFET Technology

Non-Volatile Memory Devices

Gated Diode Memory Cells

Voltage Conversion

Integrated Circuits

Silicon-On-Insulator

Threshold Voltage Adjustment

Hybrid Double Box Back Gate

Power Delivery

Radiation Hardened FinFET

97 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11145758 - Fully-depleted CMOS transistors with u-shaped channel (2021-10-12),

2. 10439046 - Structure and method for improving access resistance in U-channel ETSOI (2019-10-08),

3. 10373835 - Method of lateral oxidation of nFET and pFET high-K gate stacks (2019-08-06),

4. 10326019 - Fully-depleted CMOS transistors with U-shaped channel (2019-06-18),

5. 10121786 - FinFET with U-shaped channel and S/D epitaxial cladding extending under gate spacers (2018-11-06),

6. 9941128 - Method of lateral oxidation of NFET and PFET high-k gate stacks (2018-04-10),

7. 9793400 - Semiconductor device including dual-layer source/drain region (2017-10-17),

8. 9748348 - Fully-depleted SOI MOSFET with U-shaped channel (2017-08-29),

9. 9748336 - Semiconductor device including dual-layer source/drain region (2017-08-29),

10. 9666267 - Structure and method for adjusting threshold voltage of the array of transistors (2017-05-30),

11. 9627378 - Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding (2017-04-18),

12. 9564500 - Fully-depleted SOI MOSFET with U-shaped channel (2017-02-07),

13. 9484464 - Structure and method for adjusting threshold voltage of the array of transistors (2016-11-01),

14. 9466492 - Method of lateral oxidation of NFET and PFET high-K gate stacks (2016-10-11),

15. 9425080 - Non-volatile memory device employing semiconductor nanoparticles (2016-08-23),

Sure, here is the article about inventor Robert H Dennard:

Title: The Innovations of Robert H Dennard in Semiconductor Technology

Introduction:

Robert H Dennard is a prolific inventor based in Croton-on-Hudson, NY, with an impressive portfolio of 97 patents in the field of semiconductor technology. His groundbreaking work has had a significant impact on the industry, particularly in the development of fully-depleted CMOS transistors with U-shaped channels and structures for improving access resistance in U-channel ETSOI.

Latest Patents:

One of Robert H Dennard's latest patents includes fully-depleted CMOS transistors with U-shaped channels, which effectively prevent dopant diffusion from source/drain regions into an underlying semiconductor-on-insulator layer. Another innovative patent involves a method for improving access resistance in U-channel ETSOI, which utilizes advanced fabrication techniques to enhance semiconductor device performance.

Career Highlights:

Throughout his career, Robert H Dennard has made significant contributions to companies such as IBM and Globalfoundries Inc. His innovative spirit and technical expertise have led to the development of cutting-edge technologies that have revolutionized the semiconductor industry.

Collaborations:

Robert H Dennard has collaborated closely with industry experts such as Wing Kin Luk and Kangguo Cheng. Together, they have worked on various projects that have pushed the boundaries of semiconductor technology and paved the way for future innovations in the field.

Conclusion:

In conclusion, Robert H Dennard stands as a visionary inventor whose pioneering work in semiconductor technology has left an indelible mark on the industry. His patents and collaborations reflect a career dedicated to pushing the boundaries of innovation and driving progress in the field of semiconductors.

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