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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9484464 B1

PDFFull Text
Date of Patent:
Nov. 01, 2016

Filed:

Aug. 25, 2014

Structure and method for adjusting threshold voltage of the array of transistors

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jin Cai, Cortlandt Manor, NY (US);

Kangguo Cheng, Guilderland, NY (US);

Robert H. Dennard, Croton-on-Hudson, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

Tak H. Ning, Yorktown Heights, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Steven J. Meyers

Primary Examiner:

Matthew E Warren

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/786 (2006.01); H01L 21/84 (2006.01); H01L 27/11 (2006.01); H01L 27/12 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01); H01L 21/84 (2013.01); H01L 27/11 (2013.01); H01L 27/1108 (2013.01); H01L 27/1203 (2013.01); H01L 29/792 (2013.01); H01L 27/11568 (2013.01); H01L 29/66833 (2013.01);
Abstract

A semiconductor device including a charge storage element present in a buried dielectric layer of the substrate on which the semiconductor device is formed. Charge injection may be used to introduce charge to the charge storage element of the buried dielectric layer that is present within the substrate. The charge that is injected to the charge storage element may be used to adjust the threshold voltage (Vt) of each of the semiconductor devices within an array of semiconductor devices that are present on the substrate.

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