The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Jun. 30, 2015
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Robert H. Dennard, Croton-on-Hudson, NY (US);
Isaac Lauer, Yorktown Heights, NY (US);
Ramachandran Muralidhar, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a MOSFET device is provided including: providing an SOI wafer; forming a dummy gate oxide and dummy gates on portions of the SOI layer that serve as channel regions of the device; forming spacers and doped source/drain regions in the SOI layer on opposite sides of the dummy gates; depositing a gap fill dielectric; removing the dummy gates/gate oxide; recessing areas of the SOI layer exposed by removal of the dummy gates forming one or more u-shaped grooves that extend part-way through the SOI layer such that a thickness of the SOI layer remaining in the channel regions is less than a thickness of the SOI layer in the doped source/drain regions under the spacers; and forming u-shaped replacement gate stacks in the u-shaped grooves such that u-shaped channels are formed in fully depleted regions of the SOI layer adjacent to the u-shaped replacement gate stacks.