The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Oct. 12, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Robert H. Dennard, Croton-on-Hudson, NY (US);

Zhen Zhang, Sollentuna, SE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/283 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/0257 (2013.01); H01L 21/02532 (2013.01); H01L 21/02634 (2013.01); H01L 21/02694 (2013.01); H01L 21/2251 (2013.01); H01L 21/283 (2013.01); H01L 21/324 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/41791 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a channel region interposed between a first active region and a second active region, and a gate structure formed on the channel region. A first dual-layer source/drain region is on the first active region and a second dual-layer source/drain region is on the second active region. The first and second dual-layer source/drain regions include stacked layers formed of different semiconductor materials. A first extension region is embedded in the first active region and a second extension region is embedded in the second active region.


Find Patent Forward Citations

Loading…