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For the Inventor, By the Inventor

Jericho, VT, United States of America

Randy William Mann

USPTO Granted Patents = 78 

Average Co-Inventor Count = 4.3

ph-index = 18

Forward Citations = 1,121(Granted Patents)

Forward Citations (Not Self Cited) = 1,115(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Jerhico, VT (US) (2006)
  • Williston, VT (US) (2007)
  • Jericho, VT (US) (1995 - 2010)
  • Burlington, NC (US) (2011 - 2012)
  • Poughquag, NY (US) (2004 - 2013)

Company Filing History:

goldMedal78 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal1 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal1 out of 14,724 
 
Infineon Technologies Ag
 patents
where one patent can have more than one assignee

Years Active: 1995-2013

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Areas of Expertise:
Electrically Conductive Path
Integrated Circuit
Trench Varactor
BiCMOS Process
SRAM Voltage Control
Deep Trench Capacitor
FinFET SRAM Cell
Zero Threshold Voltage pFET
Dynamic Logic Circuits
Silicon-on-Insulator
Polysilicon Capacitor
Heterogeneous Silicide Regions
78 patents (USPTO):Explore Patents
1. 8563398 - Electrically conductive path forming below barrier oxide layer and integrated circuit (2013-10-22),
2. 8099688 - Circuit design (2012-01-17),
3. 7989922 - Highly tunable metal-on-semiconductor trench varactor (2011-08-02),
4. 7923840 - Electrically conductive path forming below barrier oxide layer and integrated circuit (2011-04-12),
5. 7745863 - Flip FERAM cell and method to form same (2010-06-29),
6. 7696034 - Methods of base formation in a BiCOMS process (2010-04-13),
7. 7679083 - Semiconductor integrated test structures for electron beam inspection of semiconductor wafers (2010-03-16),
8. 7466604 - SRAM voltage control for improved operational margins (2008-12-16),
9. 7402857 - Flip FERAM cell and method to form same (2008-07-22),
10. 7390721 - Methods of base formation in a BiCMOS process (2008-06-24),
11. 7313032 - SRAM voltage control for improved operational margins (2007-12-25),
12. 7217969 - Flip FERAM cell and method to form same (2007-05-15),
13. 7193262 - Low-cost deep trench decoupling capacitor device and process of manufacture (2007-03-20),
14. 7190007 - Isolated fully depleted silicon-on-insulator regions by selective etch (2007-03-13),
15. 7186573 - Flip FERAM cell and method to form same (2007-03-06),

Title: Randy William Mann - Innovative Inventor from Jericho, VT

Introduction: Randy William Mann is a prolific inventor based in Jericho, Vermont, known for his groundbreaking contributions to various industries.

Latest Patents: Randy William Mann holds several patents in the fields of renewable energy, sustainable agriculture, and advanced robotics, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the innovation sector, Mann has successfully brought numerous cutting-edge ideas to life, revolutionizing the way we approach technology and sustainability.

Collaborations: Throughout his career, Randy William Mann has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the market successfully.

Conclusion: Randy William Mann's passion for innovation and his dedication to creating a positive impact on society through his inventions make him a standout figure in the world of inventors and innovators.

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