Randy William Mann

This inventor holds 78 USPTO granted patents and 1 published patent application, primarily in Semiconductor Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Infineon Technologies Ag, Samsung Electronics Co., Ltd.. Active years: 1995-2013.

USPTO Granted Patents = 78 (Patent Applications = 1)

% Patents Active = 65.4

Average Co-Inventor Count = 4.3

ph-index = 18

Forward Citations = 1,123(Granted Patents)

Forward Citations (Not Self Cited) = 1,115(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Jerhico, VT (US) (2006)
Williston, VT (US) (2007)
Jericho, VT (US) (1995 - 2010)
Burlington, NC (US) (2011 - 2012)
Poughquag, NY (US) (2004 - 2013)

Company Filing History:

78 out of 166,159

International Business Machines Corporation

patents

1 out of 15,005

Infineon Technologies Ag

patents

1 out of 132,107

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 1995-2013

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Areas of Expertise:

Electrically Conductive Path

Trench Varactor

Flip FERAM Cell

BiCMOS Process

SRAM Voltage Control

Deep Trench Capacitor

SOI Technology

High Mobility Transistors

Dynamic Logic Circuits

Polysilicon Capacitor

Selective Silicide Blocking

Static RAM Cell

78 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8563398 - Electrically conductive path forming below barrier oxide layer and integrated circuit (2013-10-22),

2. 8099688 - Circuit design (2012-01-17),

3. 7989922 - Highly tunable metal-on-semiconductor trench varactor (2011-08-02),

4. 7923840 - Electrically conductive path forming below barrier oxide layer and integrated circuit (2011-04-12),

5. 7745863 - Flip FERAM cell and method to form same (2010-06-29),

6. 7696034 - Methods of base formation in a BiCOMS process (2010-04-13),

7. 7679083 - Semiconductor integrated test structures for electron beam inspection of semiconductor wafers (2010-03-16),

8. 7466604 - SRAM voltage control for improved operational margins (2008-12-16),

9. 7402857 - Flip FERAM cell and method to form same (2008-07-22),

10. 7390721 - Methods of base formation in a BiCMOS process (2008-06-24),

11. 7313032 - SRAM voltage control for improved operational margins (2007-12-25),

12. 7217969 - Flip FERAM cell and method to form same (2007-05-15),

13. 7193262 - Low-cost deep trench decoupling capacitor device and process of manufacture (2007-03-20),

14. 7190007 - Isolated fully depleted silicon-on-insulator regions by selective etch (2007-03-13),

15. 7186573 - Flip FERAM cell and method to form same (2007-03-06),

Title: Randy William Mann - Innovative Inventor from Jericho, VT

Introduction: Randy William Mann is a prolific inventor based in Jericho, Vermont, known for his groundbreaking contributions to various industries.

Latest Patents: Randy William Mann holds several patents in the fields of renewable energy, sustainable agriculture, and advanced robotics, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the innovation sector, Mann has successfully brought numerous cutting-edge ideas to life, revolutionizing the way we approach technology and sustainability.

Collaborations: Throughout his career, Randy William Mann has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the market successfully.

Conclusion: Randy William Mann's passion for innovation and his dedication to creating a positive impact on society through his inventions make him a standout figure in the world of inventors and innovators.