The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Dec. 23, 2010
Applicants:

Gregory Costrini, Hopewell Junction, NY (US);

Ramachandra Divakaruni, Ossining, NY (US);

Jeffrey P. Gambino, Westford, VT (US);

Randy W. Mann, Poughquag, NY (US);

Inventors:

Gregory Costrini, Hopewell Junction, NY (US);

Ramachandra Divakaruni, Ossining, NY (US);

Jeffrey P. Gambino, Westford, VT (US);

Randy W. Mann, Poughquag, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming an electrically conductive path under a barrier oxide layer of a semiconductor-on-insulator (SOI) substrate and an integrated circuit including the path are disclosed. In one embodiment, the method includes forming an electrically conductive path below a barrier oxide layer of a semiconductor-on-insulator (SOI) substrate, the method comprising: forming a first barrier oxide layer on a semiconductor substrate; forming the electrically conductive path within the first barrier oxide layer; and forming a second barrier oxide layer on the first barrier oxide layer. The electrically conductive path allows reduction of SRAM area by forming a wiring path underneath the barrier oxide layer on the SOI substrate.


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