The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 05, 2004
Matthew J. Breitwisch, Essex Junction, VT (US);
Chung H. Lam, Williston, VT (US);
Randy W. Mann, Williston, VT (US);
Dale W. Martin, Williston, VT (US);
Matthew J. Breitwisch, Essex Junction, VT (US);
Chung H. Lam, Williston, VT (US);
Randy W. Mann, Williston, VT (US);
Dale W. Martin, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions; implanting dopants into the substrate to provide an etch differential doped portion in the semiconducting regions underlying an upper Si-containing surface of the semiconducting regions; forming a trench in the substrate including the semiconducting regions and the insulating regions; removing the etch differential doped portion from the semiconductor regions to produce a cavity underlying the upper surface of the semiconducting regions; and filling the trench with a trench dielectric, wherein the trench dielectric material encloses the cavity underlying the upper Si-containing surface of the semiconducting regions. The upper Si-containing surface of the semiconducting regions has a uniform thickness of less than about 100 Å.