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For the Inventor, By the Inventor

Lexington, MA, United States of America

Rabindra N Das

USPTO Granted Patents = 15 

Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 194(Granted Patents)


Company Filing History:

goldMedal15 out of 8,369 
 
Massachusetts Institute of Technology
 patents

Years Active: 2017-2020

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15 patents (USPTO):Explore Patents
1. 10658424 - Superconducting integrated circuit (2020-05-19),
2. 10586909 - Cryogenic electronic packages and assemblies (2020-03-10),
3. 10418350 - Semiconductor structures for assembly in multi-layer semiconductor devices including at least one semiconductor structure (2019-09-17),
4. 10396269 - Interconnect structures for assembly of semiconductor structures including superconducting integrated circuits (2019-08-27),
5. 10381541 - Cryogenic electronic packages and methods for fabricating cryogenic electronic packages (2019-08-13),
6. 10242968 - Interconnect structure and semiconductor structures for assembly of cryogenic electronic packages (2019-03-26),
7. 10229897 - Multi-layer semiconductor structure and methods for fabricating multi-layer semiconductor structures (2019-03-12),
8. 10199553 - Shielded through via structures and methods for fabricating shielded through via structures (2019-02-05),
9. 10134972 - Qubit and coupler circuit structures and coupling techniques (2018-11-20),
10. 10121754 - Interconnect structures and methods for fabricating interconnect structures (2018-11-06),
11. 10079224 - Interconnect structures for assembly of semiconductor structures including at least one integrated circuit structure (2018-09-18),
12. 9881904 - Multi-layer semiconductor devices fabricated using a combination of substrate and via structures and fabrication techniques (2018-01-30),
13. 9812429 - Interconnect structures for assembly of multi-layer semiconductor devices (2017-11-07),
14. 9786633 - Interconnect structures for fine pitch assembly of semiconductor structures and related techniques (2017-10-10),
15. 9780075 - Interconnect structures for assembly of multi-layer semiconductor devices (2017-10-03),

Title: Rabindra N Das: Innovator in Superconducting Technology

Introduction

Rabindra N Das is a prominent inventor based in Lexington, MA (US). He has made significant contributions to the field of superconducting technology, holding a total of 15 patents. His work focuses on developing advanced electronic devices that leverage superconducting materials for enhanced performance.

Latest Patents

Among his latest patents, the "Superconducting Integrated Circuit" stands out. This invention includes at least one superconducting resonator, featuring a substrate and a conductive layer made from a low-stress polycrystalline Titanium Nitride (TiN) material. This design ensures that the superconducting resonator and/or qubit operates as a high-quality factor, low-loss superconducting device. Another notable patent is the "Cryogenic Electronic Packages and Assemblies." This invention comprises a circuitized substrate, an interposer, and a superconducting multichip module (SMCM), which are all crucial for creating efficient cryogenic electronic assemblies.

Career Highlights

Rabindra N Das is affiliated with the Massachusetts Institute of Technology, where he continues to push the boundaries of superconducting technology. His innovative work has garnered attention in both academic and industrial circles, contributing to advancements in electronic systems.

Collaborations

He has collaborated with notable colleagues, including Mark A Gouker and Donna-Ruth Webb Yost, further enhancing the impact of his research and inventions.

Conclusion

Rabindra N Das is a key figure in the field of superconducting technology, with a strong portfolio of patents that reflect his innovative spirit and dedication to advancing electronic systems. His contributions are paving the way for future developments in this exciting area of research.

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