The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Aug. 11, 2015
Massachusetts Institute of Technology, Cambridge, MA (US);
Rabindra N. Das, Lexington, MA (US);
Donna-Ruth W. Yost, Acton, MA (US);
Chenson Chen, Waban, MA (US);
Keith Warner, Whitinsville, MA (US);
Steven A. Vitale, Waltham, MA (US);
Mark A. Gouker, Belmont, MA (US);
Craig L. Keast, Groton, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A multi-layer semiconductor device includes at least a first semiconductor structure and a second semiconductor structure, each having first and second opposing surfaces. The second semiconductor structure includes a first section and a second section, the second section including a device layer and an insulating layer. The second semiconductor structure also includes one or more conductive structures and one or more interconnect pads. Select ones of the interconnect pads are electrically coupled to select ones of the conductive structures. The multi-layer semiconductor device additionally includes one or more interconnect structures disposed between and coupled to select portions of second surfaces of each of the first and second semiconductor structures. A corresponding method for fabricating a multi-layer semiconductor device is also provided.