The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Nov. 03, 2016
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
William D. Oliver, Arlington, MA (US);
Andrew J. Kerman, Arlington, MA (US);
Rabindra N. Das, Lexington, MA (US);
Donna-Ruth W. Yost, Acton, MA (US);
Danna Rosenberg, Arlington, MA (US);
Mark A. Gouker, Belmont, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 39/04 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 39/04 (2013.01); H01L 23/49827 (2013.01); H01L 23/552 (2013.01);
Abstract
Described are concepts, systems, circuits and techniques related to shielded through via structures and methods for fabricating such shielded through via structures. The described shielded through via structures and techniques allow for assembly of multi-layer semiconductor structures including one or more superconducting semiconductor structures (or integrated circuits).