The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Aug. 11, 2015
Massachusetts Institute of Technology, Cambridge, MA (US);
Rabindra N. Das, Lexington, MA (US);
Donna-Ruth W. Yost, Acton, MA (US);
Chenson Chen, Waban, MA (US);
Keith Warner, Whitinsville, MA (US);
Steven A. Vitale, Waltham, MA (US);
Mark A. Gouker, Belmont, MA (US);
Craig L. Keast, Groton, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A multi-layer semiconductor device includes at least two semiconductor structures, each of the at least two semiconductor structures having first and second opposing surfaces and including a first section and a second section. The second section includes a device layer and an insulating layer. The multi-layer semiconductor device also includes one or more conductive structures and one or more interconnect pads. Select ones of the one or more interconnect pads are electrically coupled to the one or more conductive structures. The multi-layer semiconductor device additionally includes a via joining layer disposed between and coupled to second surfaces of each of the at least two semiconductor structures. A corresponding method for fabricating a multi-layer semiconductor device is also provided.