The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Nov. 03, 2016
Massachusetts Institute of Technology, Cambridge, MA (US);
William D. Oliver, Arlington, MA (US);
Andrew J. Kerman, Arlington, MA (US);
Rabindra N. Das, Lexington, MA (US);
Donna-Ruth W. Yost, Acton, MA (US);
Danna Rosenberg, Arlington, MA (US);
Mark A. Gouker, Belmont, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.