The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Nov. 03, 2016
Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

William D. Oliver, Arlington, MA (US);

Andrew J. Kerman, Arlington, MA (US);

Rabindra N. Das, Lexington, MA (US);

Donna-Ruth W. Yost, Acton, MA (US);

Danna Rosenberg, Arlington, MA (US);

Mark A. Gouker, Belmont, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 39/02 (2006.01); G06N 99/00 (2010.01); H01L 25/00 (2006.01); H01L 27/18 (2006.01); B82Y 10/00 (2011.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); G06N 99/002 (2013.01); H01L 21/02063 (2013.01); H01L 21/02282 (2013.01); H01L 21/02345 (2013.01); H01L 22/26 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/18 (2013.01); H01L 39/02 (2013.01); B82Y 10/00 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05116 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05609 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08503 (2013.01); H01L 2224/11001 (2013.01); H01L 2224/11005 (2013.01); H01L 2224/117 (2013.01); H01L 2224/1111 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11474 (2013.01); H01L 2224/11902 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73207 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/8181 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06531 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06572 (2013.01);
Abstract

A method of fabricating an interconnect structure includes providing a semiconductor structure and performing a first spin resist and bake cycle. The first spin resist and bake cycle includes applying a first predetermined amount of a resist material over one or more portions of the semiconductor structure and baking the semiconductor structure to form a first resist layer portion of a resist layer. The method also includes performing a next spin resist and bake cycle. The next spin resist and bake cycle includes applying a next predetermined amount of the resist material and baking the semiconductor structure to form a next resist layer portion of the resist layer. The method additionally includes depositing a conductive material in an opening formed in the resist layer and forming a conductive structure from the conductive material. An interconnect structure is also provided.


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