The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Sep. 21, 2016
Multi-layer semiconductor structure and methods for fabricating multi-layer semiconductor structures
Massachusetts Institute of Technology, Cambridge, MA (US);
Rabindra N. Das, Lexington, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A multi-layer semiconductor device (or structure) includes at least two semiconductor structures, each of the at least two semiconductor structures having first and second opposing surfaces. Additionally, each of the at least two semiconductor structures includes a first section having first and second opposing surfaces and a plurality of electrical connections extending between select portions of the first and second surfaces. Each of the at least two semiconductor structures also includes a second section having first and second opposing surfaces, with the first surface of the second section disposed over and coupled to the second surface of the first section. Methods for fabricating a multi-layer semiconductor structure from a plurality of semiconductor structures are also provided.