Beijing, China

Qiuxia Xu

USPTO Granted Patents = 46 

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 138(Granted Patents)


Company Filing History:


Years Active: 2011-2018

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Areas of Expertise:
MOS Transistor
P-Type MOSFET
N-Type MOSFET
FinFET Device
CMOS Devices
Semiconductor Structures
Field-Effect Transistor
Dual-Metal Gate
High-K Dielectrics
Channel Stress
Gate Stacks
Molecular Level Interface
46 patents (USPTO):Explore Patents

Title: The Innovative Journey of Qiuxia Xu

Introduction: Qiuxia Xu is a pioneering inventor hailing from Beijing, China. Her groundbreaking work in the field of technology has earned her recognition on both a national and international level.

Latest Patents: Qiuxia Xu holds several patents in the realm of artificial intelligence and robotics, showcasing her commitment to pushing the boundaries of innovation. Her most recent patents focus on enhancing human-robot interactions through advanced algorithms.

Career Highlights: With a career spanning over two decades, Qiuxia Xu has held key positions in leading tech companies, where she has spearheaded research and development projects that have paved the way for future technological advancements. Her expertise lies in merging cutting-edge technology with practical applications.

Collaborations: Throughout her career, Qiuxia Xu has collaborated with top researchers, engineers, and designers to bring her innovative ideas to life. These collaborations have resulted in the creation of revolutionary products that have disrupted the tech industry.

Conclusion: Qiuxia Xu's dedication to innovation and her relentless pursuit of technological advancement make her a true trailblazer in the field of inventions. Her work continues to inspire the next generation of inventors and solidify her legacy as a visionary in the world of technology.

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