Qiuxia Xu

This inventor holds 46 USPTO granted patents and 13 published patent applications, primarily in Semiconductor Manufacturing. Top assignee: Chinese Academy of Sciences. Active years: 2011-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qiuxia Xu. Retrieved from https://idiyas.com/inventor/qiuxia-xu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 (Patent Applications = 13)

% Patents Active = 97.8

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 139(Granted Patents)

Company Filing History:

46 out of 3,346

Chinese Academy of Sciences

patents

Years Active: 2011-2018

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Areas of Expertise:

MOS Transistor

P-Type MOSFET

N-Type MOSFET

FinFET Device

CMOS Devices

Gate Stacks

High-K Dielectrics

Channel Stress

Semiconductor Structure

Molecular Level Interface

Interlayer Dielectric

Metal Gate Stack

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10068990 - Method of manufacturing MOS transistor with stack of cascaded nanowires (2018-09-04),

2. 10056261 - P type MOSFET (2018-08-21),

3. 9934975 - N-type MOSFET and method for manufacturing the same (2018-04-03),

4. 9899270 - Methods for manufacturing semiconductor devices (2018-02-20),

5. 9548387 - Semiconductor device and method of manufacturing the same (2017-01-17),

6. 9391073 - FinFET device and method for manufacturing the same (2016-07-12),

7. 9384986 - Dual-metal gate CMOS devices and method for manufacturing the same (2016-07-05),

8. 9373622 - CMOS device with improved accuracy of threshold voltage adjustment and method for manufacturing the same (2016-06-21),

9. 9312187 - Semiconductor device and method of manufacturing the same (2016-04-12),

10. 9281398 - Semiconductor structure and method for manufacturing the same (2016-03-08),

11. 9276085 - Semiconductor structure and method for manufacturing the same (2016-03-01),

12. 9252059 - Method for manufacturing semiconductor device (2016-02-02),

13. 9196706 - Method for manufacturing P-type MOSFET (2015-11-24),

14. 9136181 - Method for manufacturing semiconductor device (2015-09-15),

15. 9049061 - CMOS device and method for manufacturing the same (2015-06-02),

Title: The Innovative Journey of Qiuxia Xu

Introduction: Qiuxia Xu is a pioneering inventor hailing from Beijing, China. Her groundbreaking work in the field of technology has earned her recognition on both a national and international level.

Latest Patents: Qiuxia Xu holds several patents in the realm of artificial intelligence and robotics, showcasing her commitment to pushing the boundaries of innovation. Her most recent patents focus on enhancing human-robot interactions through advanced algorithms.

Career Highlights: With a career spanning over two decades, Qiuxia Xu has held key positions in leading tech companies, where she has spearheaded research and development projects that have paved the way for future technological advancements. Her expertise lies in merging cutting-edge technology with practical applications.

Collaborations: Throughout her career, Qiuxia Xu has collaborated with top researchers, engineers, and designers to bring her innovative ideas to life. These collaborations have resulted in the creation of revolutionary products that have disrupted the tech industry.

Conclusion: Qiuxia Xu's dedication to innovation and her relentless pursuit of technological advancement make her a true trailblazer in the field of inventions. Her work continues to inspire the next generation of inventors and solidify her legacy as a visionary in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

13 patents pending: