The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Apr. 26, 2012
Huaxiang Yin, Beijing, CN;
Xiaolong MA, Beijing, CN;
Changliang Qi, Beijing, CN;
Qiuxia Xu, Beijing, CN;
Dapeng Chen, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Xiaolong Ma, Beijing, CN;
Changliang Qi, Beijing, CN;
Qiuxia Xu, Beijing, CN;
Dapeng Chen, Beijing, CN;
Abstract
The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.