Hefei, China

Qian Xu

This inventor holds 24 USPTO granted patents and 16 published patent applications and 4 EPO patents, primarily in Electrostatic Discharge Protection. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qian Xu. Retrieved from https://idiyas.com/inventor/qian-xu-4htv0gej

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 24 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.2

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Electrostatic Discharge
Protection Circuit
Semiconductor Device
ESD Protection
Chip
Latch-up Test
Capacitance Measurement
Silicon Controlled Rectifier
Integrated Circuit
Anti-fuse Circuit
Pulse Detection Circuit
Hot Carrier Injection
24 patents (USPTO):Explore Patents

Title: Inventor Qian Xu: Revolutionizing Technology in Hefei

Introduction: Qian Xu is a pioneering inventor based in Hefei, China, known for her groundbreaking contributions to the field of technology.

Latest Patents: Qian Xu holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing her diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Qian Xu has worked with leading research institutions and universities to develop cutting-edge technologies that have the potential to shape the future.

Collaborations: Throughout her career, Qian Xu has collaborated with multinational companies, startups, and fellow inventors to bring her ideas to life and create impactful solutions to complex challenges.

Conclusion: Qian Xu's relentless pursuit of innovation and her passion for pushing the boundaries of technology make her a true trailblazer in the field of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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