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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12027846 B1

PDFFull Text
Date of Patent:
Jul. 02, 2024

Filed:

Mar. 23, 2022

Electrostatic protection structure and electrostatic protection circuit

Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yingtao Zhang, Hefei, CN;

Pan Mao, Hefei, CN;

Junjie Liu, Hefei, CN;

Lingxin Zhu, Hefei, CN;

Bin Song, Hefei, CN;

Qian Xu, Hefei, CN;

Tieh-Chiang Wu, Hefei, CN;

Assignee:

ChangXin Memory Technologies, Inc., Hefei, CN;

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Kevin J Comber

Int. Cl.
CPC ...
H02H 9/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/02 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0266 (2013.01); H01L 27/0292 (2013.01);
Abstract

Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode. The electrostatic protection structure weakens the positive feedback of the parasitic transistor in the SCR device, improves the anti-latch capability of the device, realizes stronger protection capability, and enhances the reliability of the circuit.

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Zhang, Yingtao. (2024). Electrostatic protection structure and electrostatic protection circuit (U.S. Patent No. 12027846). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12027846

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