The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Dec. 08, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Qian Xu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides an electrostatic protection device, and relates to the technical field of semiconductors. The electrostatic discharge protection device includes a first P-type heavily-doped region, a first N-type heavily-doped region, a second N-type heavily-doped region, a second P-type heavily-doped region, and a third N-type heavily-doped region. The first P-type heavily-doped region and the first N-type heavily-doped region are located in a P well, the second P-type heavily-doped region and the third N-type heavily-doped region are located in a first N well, one part of the second N-type heavily-doped region is located in the P well, the other part of the second N-type heavily-doped region is located in first N well, and the P well and the first N well are adjacent to each other and both located in the P-type substrate.