The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Mar. 28, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Qian Xu, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/28 (2006.01); H01L 27/082 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 22/30 (2013.01); G01R 31/2856 (2013.01); H01L 27/082 (2013.01); H01L 29/0626 (2013.01); H01L 29/7313 (2013.01); H01L 27/0921 (2013.01);
Abstract

The present disclosure provides a latch-up test structure, including: a substrate of a first conductive type; a first well region of the first conductive type, located in the substrate of the first conductive type; a first doped region of the first conductive type, located in the first well region of the first conductive type; a first doped region of a second conductive type, located in the first well region of the first conductive type; and a second doped region of the first conductive type, a second doped region of the second conductive type, a third doped region of the first conductive type, and a third doped region of the second conductive type that are arranged at intervals in the substrate of the first conductive type.


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