The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Sep. 02, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Qian Xu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H02H 1/00 (2006.01);
U.S. Cl.
CPC ...
H02H 9/045 (2013.01); H02H 1/0007 (2013.01);
Abstract

Embodiments provide an electrostatic discharge (ESD) protection circuit and an electrostatic discharge method. The ESD protection circuit includes: a pulse detection unit (), a discharge transistor (), a feedback delay unit (), and a processing unit (). A first terminal of the pulse detection unit () is connected to a first pad (), a second terminal of the pulse detection unit () is connected to a second pad (), and an output terminal of the pulse detection unit () is configured to output a detection result signal. A gate of the discharge transistor () is connected to the output terminal of the pulse detection unit (), a drain of the discharge transistor () is connected to the first pad (), and a source of the discharge transistor () is connected to the second pad (). The feedback delay unit () includes a PMOS transistor (Mp) and an NMOS transistor (Mn).


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