The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jan. 11, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Bin Song, Hefei City, CN;

Qian Xu, Hefei City, CN;

Tieh-Chiang Wu, Hefei City, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H10D 89/611 (2025.01); H10D 89/711 (2025.01); H02H 9/046 (2013.01);
Abstract

An electrostatic discharge protection structure and a chip are provided. The electrostatic discharge protection structure includes: a semiconductor substrate, an N-type well, a P-type well, a first N-type doped portion, a first P-type doped portion, a second P-type doped portion and a second N-type doped portion. The N-type well and the P-type well are located in the semiconductor substrate. The first N-type doped portion and the second P-type doped portion are located in the P-type well, and the first P-type doped portion and the second N-type doped portion are located in the N-well. The first N-type doped portion has a 'T' shape structure, the first P-type doped portion has a “U” shape structure, and a part of the first N-type doped portion is located in a “U” shape opening of the first P-type doped portion.


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Song, Bin. (2026). Electrostatic discharge protection structure and chip (U.S. Patent No. 12615848). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615848

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