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For the Inventor, By the Inventor

Richardson, TX, United States of America

Pr Chidambaram

USPTO Granted Patents = 16

Average Co-Inventor Count = 1.8

ph-index = 7

Forward Citations = 279(Granted Patents)


Company Filing History:

goldMedal16 out of 29,314 
 
Texas Instruments Corporation
 patents

Years Active: 2003-2011

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16 patents (USPTO):Explore Patents
1. 7902576 - Phosphorus activated NMOS using SiC process (2011-03-08),
2. 7670892 - Nitrogen based implants for defect reduction in strained silicon (2010-03-02),
3. 7560324 - Drain extended MOS transistors and methods for making the same (2009-07-14),
4. 7339215 - Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel (2008-03-04),
5. 7244654 - Drive current improvement from recessed SiGe incorporation close to gate (2007-07-17),
6. 7217626 - Transistor fabrication methods using dual sidewall spacers (2007-05-15),
7. 7208362 - Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel (2007-04-24),
8. 7122435 - Methods, systems and structures for forming improved transistors (2006-10-17),
9. 7118977 - System and method for improved dopant profiles in CMOS transistors (2006-10-10),
10. 7101751 - Versatile system for limiting electric field degradation of semiconductor structures (2006-09-05),
11. 7061058 - Forming a retrograde well in a transistor to enhance performance of the transistor (2006-06-13),
12. 7060579 - Increased drive current by isotropic recess etch (2006-06-13),
13. 7012028 - Transistor fabrication methods using reduced width sidewall spacers (2006-03-14),
14. 6927137 - Forming a retrograde well in a transistor to enhance performance of the transistor (2005-08-09),
15. 6818518 - Method for producing low/high voltage threshold transistors in semiconductor processing (2004-11-16),

Title: Pr Chidambaram: Innovator in Semiconductor Technology

Introduction

Pr Chidambaram is a prominent inventor based in Richardson, TX (US), known for his significant contributions to semiconductor technology. He holds a total of 16 patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

Among his latest patents, one notable invention is the "Phosphorus activated NMOS using SiC process." This method involves treating a semiconductor substrate with carbon and forming a gate structure over it. The process defines a channel region within the substrate, allowing for the formation of source and drain regions on opposing sides of the channel with a phosphorus dopant. Another significant patent is related to "Nitrogen based implants for defect reduction in strained silicon." This invention enhances the yield strength of the semiconductor substrate, allowing for improved carrier mobility and reduced dimensions of transistors while mitigating plastic deformation during fabrication.

Career Highlights

Pr Chidambaram is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that enhance the performance and reliability of electronic devices.

Collaborations

He has collaborated with notable coworkers, including Haowen Bu and Srinivasan Chakravarthi, contributing to various projects that advance semiconductor technology.

Conclusion

Pr Chidambaram's innovative work in semiconductor technology, particularly through his patents, has made a significant impact in the field. His contributions continue to shape the future of electronics and enhance the capabilities of modern devices.

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