The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Jul. 29, 2004
PR Chidambaram, Richardson, TX (US);
Lindsey Hall, Plano, TX (US);
Haowen Bu, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method () of forming a transistor includes forming a gate structure () over a semiconductor body and forming recesses () using an isotropic etch using the gate structure as an etch mask. The isotropic etch forms a recess in the semiconductor body that extends laterally in the semiconductor body toward a channel portion of the semiconductor body underlying the gate structure. The method further includes epitaxially growing silicon () comprising stress-inducing species in the recesses. The source and drain regions are then implanted () in the semiconductor body on opposing sides of the gate structure.