The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Jul. 08, 2004
Applicant:
PR Chidambaram, Richardson, TX (US);
Inventor:
Pr Chidambaram, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Drain extended MOS transistors () and fabrication methods () therefor are presented, in which a voltage drop region () is provided in a well () of a second conductivity type between a channel () of a first conductivity type and a drain () to inhibit channel hot carrier or direct tunneling degradation of the transistor gate dielectric () for high voltage operation. The voltage drop region () has more dopants of the first conductivity type and/or fewer dopants of the second conductivity type than does the well () so as to shift the high fields away from the transistor gate dielectric ().