Po-Yu Yang, a prominent inventor based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 53 patents, Yang has established himself as a leading figure in the development of High Electron Mobility Transistors (HEMTs).

Latest Patents

Among Po-Yu Yang's latest inventions is a groundbreaking HEMT featuring a stair-like compound layer at the drain. This innovative design includes a first III-V compound layer, with a second III-V compound layer placed on top. The unique composition of these layers enhances performance by differing in their material properties. The structure also integrates source, gate, and drain electrodes with the gate electrode positioned strategically between the source and drain electrodes. Another noteworthy patent describes a method for forming a HEMT, which outlines a series of intricate steps including the formation of a buffer layer, channel layer, barrier layer, and the metal gate layer on a semiconductor substrate.

Career Highlights

Throughout his career, Po-Yu Yang has worked with notable companies such as United Microelectronics Corporation and Chunghwa Picture Tubes Limited. His work in these organizations has propelled advancements in semiconductor technology and has influenced the industry significantly.

Collaborations

Yang has collaborated with talented individuals including Hsun-Wen Wang and Yu-Wen Hung. These partnerships have contributed to the success of his inventions and reflect his ability to work alongside skilled professionals in the field.

Conclusion

Po-Yu Yang's remarkable achievements in semiconductor technology, particularly in HEMT development, showcase his innovative spirit and dedication to his craft. With 53 patents to his name, Yang continues to inspire future generations of inventors and engineers to push the boundaries of technology.

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