The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jul. 01, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Po-Yu Yang, Hsinchu, TW;
Hsun-Wen Wang, Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/115 (2025.01); H10D 64/021 (2025.01);
Abstract
A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and the gate structure, and an air gap between the passivation layer and the gate structure. The gate structure includes a semiconductor gate layer and a metal gate layer on the semiconductor gate layer. The air gap is in direct contact with a sidewall of the passivation layer, a sidewall of the metal gate layer, a sidewall and a top surface of the semiconductor gate layer.