The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Sep. 27, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Po-Yu Yang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract
A method for forming a high electron mobility transistor includes the steps of providing a substrate, sequentially forming a buffer layer, a channel layer, a barrier layer, and a semiconductor gate layer on the substrate, forming a metal gate layer on the semiconductor gate layer, forming an insulating layer on the barrier layer, the semiconductor gate layer, and the metal gate layer and a passivation layer on the insulating layer, forming an opening through the passivation layer and the insulating layer to expose the metal gate layer, and forming a gate electrode on the passivation layer and filling the opening.