The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Feb. 17, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Po-Yu Yang, Hsinchu, TW;

Chung-Yi Chiu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8418 (2023.02); H10B 63/30 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02);
Abstract

A semiconductor memory device includes a substrate and a transistor disposed on the substrate. The transistor includes a source doped region, a drain doped region, a channel region, and a gate over the channel region. A data storage region is in proximity to the transistor and recessed into the substrate. The data storage region includes a ridge and a V-shaped groove. A bottom electrode layer conformally covers the ridge and V-shaped groove within the data storage region. A resistive-switching layer conformally covers the bottom electrode layer. A top electrode layer covers the resistive-switching layer.


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