The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Dec. 18, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Po-Yu Yang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2005.12); H01L 21/02 (2005.12); H01L 29/205 (2005.12); H01L 29/40 (2005.12); H01L 29/417 (2005.12); H01L 29/423 (2005.12); H01L 29/66 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7787 (2012.12); H01L 21/0254 (2012.12); H01L 21/02639 (2012.12); H01L 29/205 (2012.12); H01L 29/401 (2012.12); H01L 29/41775 (2012.12); H01L 29/4236 (2012.12); H01L 29/42364 (2012.12); H01L 29/66462 (2012.12);
Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a gate dielectric layer on the barrier layer; forming a work function metal layer on the gate dielectric layer; patterning the work function metal layer and the gate dielectric layer; forming a gate electrode on the work function metal layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.