The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Dec. 24, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Po-Yu Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device includes the following steps. A substrate is provided. A semiconductor channel layer is formed on the substrate. A semiconductor barrier layer is formed on the semiconductor channel layer. An etching process is performed to expose a portion of the semiconductor channel layer. A dielectric layer is formed to cover the semiconductor barrier layer and the exposed semiconductor channel layer. A first electrode is formed after forming the dielectric layer, where the first electrode includes a body portion and a vertical extension portion, the body portion is electrically connected to the semiconductor barrier layer, and a bottom surface of the vertical extension portion is lower than a top surface of the semiconductor channel layer.