The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
May. 28, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Po-Yu Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a HEMT is disclosed. A substrate is provided. A buffer layer, a channel layer on the buffer layer, a barrier layer on the channel layer, and a semiconductor gate layer on the barrier layer are formed on the substrate. A metal gate layer is formed on the semiconductor gate layer. A spacer is formed on sidewalls of the metal gate layer. The semiconductor gate layer is then etched by using the spacer and the metal gate layer as an etching mask. A passivation layer is then formed to cover the barrier layer, the semiconductor gate layer and the metal gate layer. An opening is formed in the passivation layer to expose the metal gate layer. A gate electrode is formed on the passivation layer and in direct contact with the metal gate layer.